Настоящият сайт използва „бисквитки“
Нашият уебсайт използва „бисквитки“, които гарантират възможно най-оптималната му работа.
Нашият уебсайт използва „бисквитки“, които гарантират възможно най-оптималната му работа.
| Device Type (General) | Solid state drive - internal |
| Capacity (General) | 4 TB |
| Hardware Encryption (General) | Yes |
| Encryption Algorithm (General) | 256-bit AES |
| NAND Flash Memory Type (General) | Multi-level cell (MLC) |
| Integrated Heatsink (General) | Yes |
| Form Factor (General) | M.2 2280 |
| Interface (General) | PCIe 4.0 x4 (NVMe) |
| Features (General) | Samsung V-NAND 3bit MLC Technology, TRIM support, Device Sleep support, Garbage Collection technology, 2 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T. |
| Width (General) | 24.3 mm |
| Depth (General) | 80 mm |
| Height (General) | 8.2 mm |
| Weight (General) | 28 g |
| Internal Data Rate (Performance) | 7450 MBps (read) / 6900 MBps (write) |
| Maximum 4KB Random Write (Performance) | 1550000 IOPS |
| Maximum 4KB Random Read (Performance) | 1600000 IOPS |
| MTBF (Reliability) | 1,500,000 hours |
| Interfaces (Expansion & Connectivity) | PCI Express 4.0 x4 (NVMe) |
| Compatible Bay (Expansion & Connectivity) | M.2 2280 |
| Power Consumption (Power) | 5.5 Watt (average) 55 mW (idle) |
| Software Included (Software & System Requirements) | Samsung Magician Software |
| Compliant Standards (Miscellaneous) | IEEE 1667 |
| Min Operating Temperature (Environmental Parameters) | 0 °C |
| Max Operating Temperature (Environmental Parameters) | 70 °C |
| Shock Tolerance (operating) (Environmental Parameters) | 0.5 ms half-sine |
| Shock Tolerance (non-operating) (Environmental Parameters) | 1500 g |